• 1c node, 6th generation of 10nm process, developed in most efficient way by applying platform of industry-leading 1b technology
  • Cost competitiveness improved with adoption of new material, optimization of EUV process, while power efficiency enhanced to help reduce electricity cost of data centers by 30% maximum
  • Mass production expected to be ready this year for volume shipment in 2025
  • Application of 1c node to leading-edge DRAM products to bring differentiated values to customers
SEOUL, South Korea, Aug. 29, 2024 /PRNewswire/ -- SK hynix Inc. (or "the company", www.skhynix.com) announced today that it has developed the industry's first 16Gb DDR5 built using its 1c node, the sixth generation of the 10nm process.

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